The inverter circuit as shown in the figure above. Used to design application specific integrated circuits (ASICs).In the Flash memory chip designing also we use them.These devices are more immune to noise than NMOS devices. When a high voltage is applied to the gate, the PMOS does not conduct and when a low voltage is applied, it conducts. P-MOS consists of P-type Source and Drain diffused on an N-type substrate. NMOS is faster than PMOS, as the carriers are electrons that travel twice as fast as the holes. When a high voltage is applied to the gate, the NMOS conducts and when low voltage is applied to the gate, it does not conduct. Here, the majority carriers are electrons. The explanation of symbol both symbols is below.Ī p-type substrate is used which has n-type source and drain diffused on it. The CMOS is a logic made with PMOS and NMOS. This technology uses both P and N channel semiconductor devices. Computer memories, CPUs and cell phones make use of this technology due to various advantages.It is one of the most popular technologies in the chip design industry and is used today to form integrated circuits for various applications. CMOS stands for “Complementary Metal Oxide Semiconductor”.A new type of MOSFET logic is made combining both the PMOS and NMOS processes and is called complementary MOS (CMOS).The MOSFET (metal-oxide-semiconductor field-effect transistors) are of two types: PMOS (p-type MOS) and NMOS (n-type MOS).
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